Storage Mechanism of Spin-tunneling Magnetoresistive Random Access Memory (第7回アジア情報記録技術シンポジウム〔英文〕)
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概要
- 論文の詳細を見る
A micromagnetic model is established to analyze the storage mechanism of Magnetoresistive Random Access Memories (MRAM) based on Magnetic Tunnel Junctions (MTJ). The MTJ cell consists of a free layer, an oxide barrier layer, a synthetic antiferromagnetic sandwich (Co/Ru/Co), and an antiferromagnetic pinning layer. The magnetostatic interaction between the three ferromagnetic layers are precisely considered. Based on this model, the M-H loop of the NiFe free layer in a MTJ cell is calculated under different sizes. The interference among different MTJ cells in MRAM is also discussed.
- 社団法人映像情報メディア学会の論文
- 2002-11-08
著者
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Zhang Xuan
Lab Of Advanced Materials Department Of Materials Science And Engineering Tsinghua University
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Zhang Xuan
Lab Of Advanced Materials Dept. Of Materials Science And Engineering Tsinghua University
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Wei Dan
Lab Of Advanced Materials Department Of Materials Science And Engineering Tsinghua University
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