Storage Mechanism of Spin-tunneling Magnetoresistive Random Access Memory
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概要
- 論文の詳細を見る
A micromagnetic model is established to analyze the storage mechanism of Magnetoresistive Random Access Memories (MRAM) based on Magnetic Tunnel Junctions (MTJ). The MTJ cell consists of a free layer, an oxide barrier layer, a synthetic antiferromagnetic sandwich (Co/Ru/Co), and an antiferromagnetic pinning layer. The magnetostatic interaction between the three ferromagnetic layers are precisely considered. Based on this model, the M-H loop of the NiFe free layer in a MTJ cell is calculated under different sizes. The interference among different MTJ cells in MRAM is also discussed.
- 社団法人電子情報通信学会の論文
- 2002-11-01
著者
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Zhang Xuan
Lab Of Advanced Materials Department Of Materials Science And Engineering Tsinghua University
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Zhang Xuan
Lab Of Advanced Materials Dept. Of Materials Science And Engineering Tsinghua University
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Wei Dan
Lab of Advanced Materials, Dept. of Materials Science and Engineering, Tsinghua University
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Wei Dan
Lab Of Advanced Materials Department Of Materials Science And Engineering Tsinghua University
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Liang Xiaobing
Lab Of Advanced Materials Dept. Of Materials Science And Engineering Tsinghua University
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