Limitation for contact hole windows in an attenuated phase shift mask with i-line lithography

概要

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As the device density increases, the space sizes between patterns as well as the pattern size are getting narrower. High density pattern cause some problems, such as, proximity effect, poor pattern fidelity, and narrow process margin. The performance of the contact hole array has been investigated by the simulation and the experiment using an attenuated Phase Shift Mask (PSM) and a conventional mask with the variable partial coherence factors and numerical aperture (NA) steppers. As the contact hole to contact hole space size decreases, the process margin decreases and the side lobe effect increases compare to that of isolated contact hole pattern. In this paper, the relation between contact hole to contact hole space size and the optimum transmittance have been studied.
社団法人電子情報通信学会の論文
1995-07-27