Atomic Vapor Deposition of SBT and Electrode Materials

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概要

• 論文の詳細を見る

• AIXTRON offers an Atomic Vapor Deposition (AVD[○!R]) Tricent[○!R] production equipment for the deposition of multicomponent Oxide and Electrode materials on large wafers. It utilizes a pulsed injection of up to four liquid precursors into a precisely heated TriJet[○!R] vaporizer. Results for ferroelectric SBT layers as well as conducting Pt, Ru, and RuO_2 layers are presented. An excellent remanent polarization and layer uniformity of SBT is achieved using the AVD[○!R] technology. Electrode Materials deposited with AVD[○!R] show near bulk-like electrical conductivity and excellent step coverage.

• 社団法人電子情報通信学会の論文
• 2004-03-10

著者

• Mcmillan L

  Symetrix Corporation

• Mcmillan Larry

  Symetrix Corporation

• Araujo Carlos

  Symetrix Corporation

• Schumacher Marcus

  Aixtron K. K.

• Lohe Christoph

  AIXTRON K. K.

• Lindner Johannes

  AIXTRON K. K.

• Baumann Peter

  AIXTRON K. K.

• Solayappan Narayan

  Symetrix Corporation

• Laetz Kurt

  Symetrix Corporation

• Solayappan Narayan

  AIXTRON K. K.

• de Araujo

  AIXTRON K. K.

• Laetz Kurt

  AIXTRON K. K.

関連論文

• Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
• Atomic Vapor Deposition of SBT and Electrode Materials
• Metal-Organic Chemical Vapor Deposition and Characterization of Strontium Bismuth Tantalate(SBT)Thin Films
• Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

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