[Invited Paper] Low Temperature Gate Dielectrics for Organic Thin-Film Transistors on Plastic Substrates
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概要
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The physical and electrical properties of hafnium silicate (HfSi_xO) films produced by low temperature processing conditions (〓150°C) suitable for flexible display applications were studied using sputter deposition and ultraviolet generated ozone treatments. Films with no detectable low-κ interfacial layer were produced. Rutherford Backscattering Spectroscopy (RBS), X-ray Photoelectron Spectroscopy (XPS), and High Resolution Transmission Electron Microscopy (HR-TEM) were used to determine the composition, chemical bonding environment, thickness, and film interface. The electrical behavior of the as-deposited and annealed silicate films were determined by current-voltage (I-V) and capacitance-voltage (C-V) easurements. The electrical performance of the Organic Thin Film Transistors (OTFTs) prepared by the low temperature processing HfSi_xO_y gate oxide will also be reported.
- 社団法人電子情報通信学会の論文
- 2003-12-12
著者
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Wallace Robert
Department Of Materials Science University Of North Texas Denton
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Wallace Robert
Department Of Botany Iowa State University
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Gnade Bruce
Department Of Materials Science University Of North Texas Denton
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Punchaipetch Prakaipetch
Department of Materials Science, University of North Texas Denton
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Pant Gaurang
Department of Materials Science, University of North Texas Denton
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Pant Gaurang
Department Of Materials Science University Of North Texas Denton
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パンチャイペッチ プラカイペッチ
奈良先端科学技術大学院大学物質創成科学研究科
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- [Invited Paper] Low Temperature Gate Dielectrics for Organic Thin-Film Transistors on Plastic Substrates
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