Assessment of Optical gain in Si-Ge nanocrystals Embedded in SiO_2 films

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概要

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• Assessment of optical gain in as-grown SiO_2 thin film containing silicon (Si) and Germanium (Ge) nanocrystals, grown by rf-sputtering, by applying the variable stripe length (VSL) method, is reported. The optical gain in the thin film is demonstrated at 400 nm, at which the film shows photoluminescence peak. The analysis of the experimental data, based on one dimensional amplifier model, extracts the gain value of 4.3 cm^<-1> for a 738 nm thick film, when excited by a continuous wave 325 nm wavelength He-Cd laser.

• 社団法人電子情報通信学会の論文
• 2004-10-01

著者

• Takei Osamu

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

• Hanaizumi Osamu

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

• CHAUDHARI Chitrarekha

  Satellite Venture Business Laboratory, Gunma University

• TASHIRO Yoshiyuki

  Department of Electronic Engineering, Faculty of Engineering, Gunma University

• Chaudhari Chitrarekha

  Satellite Venture Business Laboratory Gunma University

• Tashiro Yoshiyuki

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

関連論文

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• Observation of Ultraviolet-Light Emission from Si/SiO_2 Multilayer Films Prepared by Using RF Magnetron Sputtering
• Fabrication and Characterization of Amperometric Urea Sensor
• Optical Gain in As-grown Sputtered SiO_2 Film Containing Si-Ge Nanocrystals
• Assessment of Optical gain in Si-Ge nanocrystals Embedded in SiO_2 films
• Assessment of Optical gain in Si-Ge nanocrystals Embedded in SiO_2 films
• V Centers in KI Crystals Containing Excess Iodine
• Light-emission Properties of Europium-doped Tantalum-oxide Thin Films Deposited by Radio-frequency Magnetron Sputtering

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