Optical Gain in As-grown Sputtered SiO_2 Film Containing Si-Ge Nanocrystals

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概要

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• Optical gain in as-grown SiO_2 thin film containing silicon (Si) and Germanium (Ge) nanocrystals, grown by rf-sputtering, is demonstrated by applying variable stripe length (VSL) method. The Si and Ge nanocrystals were grown while depositing the thin film and no annealing was required to form the nanocrystals. The optical gain in the thin film is demonstrated at 400nm, at which the film shows photoluminescence peak. The analysis of the experimental data, based on one dimensional amplifier model, yields the gain value of 4.3cm^<-1> for a film of 738nm thickness, when excited by a continuous wave 325nm wavelength He-Cd laser.

• 社団法人照明学会の論文

著者

• Takei Osamu

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

• Hanaizumi Osamu

  Department Of Electronic Engineering Faculty Of Engineering Gunma University

• CHAUDHARI Chitrarekha

  Satellite Venture Business Laboratory, Gunma University

• Chaudhari Chitrarekha

  Satellite Venture Business Laboratory Gunma University

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