Thin-film Deposition of Wurtzite-type Materials on Metal Surfaces

概要

論文の詳細を見る
Metal foils are expected as substrates for thin film depositions of the wurtzite-type materials to realize novel giant microelectronic devices. Thin films of gallium nitride(GaN), which is one of the wurtzite-type materials and has semiconducting properties, are tried to grow on several kinds of metal foils and their crystallinity is investigated. The crystallinity of GaN thin films is quite poor when they are directly grown on the metal foil surfaces, while highly c-axis oriented GaN thin films are easily obtained on quartz glass substrates at same growth condition. The crystallinity of GaN thin films grown on the metal foil is drastically improved by inserting silicon dioxide(SiO_2) intermediate layers of adequate thickness. On the other hand, aluminum nitride(AlN) and GaN intermediate layers prepared in this work are not effective for the improvements. Causes of the differences and their improvement mechanisms are discussed.
社団法人電子情報通信学会の論文
2001-09-21