Hydride Vapor Phase Epitaxy of InxGa1-xN Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we investigate the growth of In xGa1- xN thin films using the hydride vapor phase epitaxy (HVPE) method. Indium is hardly contained in films grown at higher growth temperatures, and phase separation tendencies between InN and GaN are observed in some grown films. In their photoluminescence spectra measured at room temperature, two peaks are observed at 370 nm and 430–440 nm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-07-15
著者
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Sato Yuichi
Dept. of Cardiol., Cedars-Sinai Med. Ctr.
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Sato Susumu
Dept.of Electrical And Electronic Engineering Faculty Of Engineering And Resource Science Akita Univ
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Sato Susumu
Dept.of Electrical And Electronic Engineering Mining College Akita University
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Sato Yuichi
Dept. Of Cardiol. Cedars-sinai Med. Ctr.
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