a-Si TFT中柵源寄生電容的研究
スポンサーリンク
概要
- 論文の詳細を見る
The gate-to-source parasitic capacitance in a-Si TFT consists of both geometric and apparent ones, in which the former is caused by geometric overlapping between gate and source electrodes, and the latter is originated from the field overlapping due to fringe of electric field by gate and source electrodes in a-Si TFT. This presentation has given a detailed analysis on both geometric and apparent parastic capacitances so that a contour map used to determine the storage capacitance in a-Si TFT for active matrix LCD has been drawn up.
- 社団法人電子情報通信学会の論文
- 1997-02-14
著者
-
Chan Y.
Department Of Anaesthesia Faculty Of Medicine University Of Malaya
-
林 〓華
Department Of Electronic Engineering City University Of Hong Kong
-
Lam Y.w.
Department Of Electronic Engineering City University Of Hong Kong
-
Lam Y.
Department Of Electronic Engineering City University Of Hong Kong
-
Webb D.
Department Of Electronic Engineering City University Of Hong Kong
-
Zou X.
Department of Electronic Engineering, City University of Hong Kong
-
Xu Z.
Department of Solid State Electronics, Huazhong University of Science and Technology
-
Zou X
Department Of Meteorology Florida State University
-
徐 重陽
華中理工大學 固體電子學系
-
Chan Y.
Department Of Electronic Engineering City University Of Hong Kong
-
鄒 雪城
Department of Meteorology, Florida State University
-
陳 忍昌
Department of Electronic Engineering, City University of Hong Kong
-
徐 重陽
Department of Solid State Electronics, Huazhong University of Science and Technology
-
林 逸華
Department of Electronic Engineering, City University of Hong Kong
関連論文
- Epidural Analgesia in Primigravidae in Spontaneous Labour at Term : A Prospective Study
- A Survey of the Current Practice of Obstetric Anaesthesia and Analgesia in Malaysis
- Stable Polymer Dielectric Film for P3HT TFT by Modified Poly-(Vinyl Phenol) with Polar Function Group
- Dual-gate E/E and E/D-mode AlGaAs/InGaAs pHEMT for microwave power applications(Session 5 Compound Semiconductor Devices II,AWAD2006)
- Dual-gate E/E and E/D-mode AlGaAs/InGaAs pHEMT for microwave power applications(Session 5 Compound Semiconductor Devices II,AWAD2006)
- a-Si TFT 中〓源寄生〓容的研究
- a-Si TFT中柵源寄生電容的研究
- a-Si TFT的界面效應
- a-Si TFT的界面效應
- Study on the Carrier Transport of Pentacene Thin Film Transistor at High Temperatures
- Pleuropulmonary blastoma : four cases
- Peripheral axotomy induces increased expression of neurotensin in large neurons n rat lumbar dorsal root ganglia
- Impact on Short-Range Precipitation Forecasts from Assimilation of Ground-Based GPS Zenith Total Delay and Rain Gauge Precipitation Observations(3.Application of GPS Data to Atmospheric Science)
- Computation of the Diffusional Transformation of Continuously Cooled Austenite for Predicting the Coefficient of Thermal Expansion in the Numerical Analysis of Thermal Stress
- Measurements of Commercial MIS Capacitors by the Surface-Photovoltage Methods
- Pregnancy Following Renal Transplantation : The Experience in Hong Kong
- Differential expression of AMPA receptor subunits in substance P receptor-containing neurons of the caudate-putamen of rats
- 3種類の大腸菌ファ-ジにおけるMNNGとHA誘発突然変異の不均一分布(速報)〔英文〕
- 21aSA-6 ベータガンマ核分光による中性子過剰な^Ni近傍核の構造研究(不安定核(III)(合同),実験核物理領域,理論核物理領域合同,実験核物理領域)