Measurements of Commercial MIS Capacitors by the Surface-Photovoltage Methods

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概要

• 論文の詳細を見る

• Representative results of measurements of some forty commercial MIS structures are presented. These specimens cover a fairly wide variety of structures such as Si-SiO_2, Si-SiO_2-Si_3N_4, Si-SiO_2-P_2O_5 and Si-Si_3N_4. The surface-state density was measured by one of the two surface photovoltage methods. Results obtained by other methods are also shown for comparison. Fairly good agreement between these methods has been obtained. Effects of post-oxidation treatments on specimens are investigated and important relationships between some MIS process variables and surface properties are revealed and confirmed. Such information should be useful to manufacturers of MIS devices.

• 社団法人応用物理学会の論文
• 1973-06-05

著者

• Lam Y.

  Department Of Electronic Engineering City University Of Hong Kong

• Lam Y.

  Department Of Electronics United College Chinese University Of Hong Kong

• LAM Y.

  Department of Botany, University of Hong Kong

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