a-Si TFT的界面效應
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概要
- 論文の詳細を見る
The concept of effective density of interface states at a-SiNx : H/a-Si : H interface has been used to analyse the performance of a-Si TFT theoretically, such as field effect, flat band voltage, subthreshold characteristics, as well as experimental research on a-Si TFT. The transfer characteristics of various a-Si TFT and the sub-threshold characteristic parameter S, with different fabrication conditions, have verified the conclusions drawn up from the theoretical analysis in this paper.
- 社団法人映像情報メディア学会の論文
- 1997-02-13
著者
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林 〓華
Department Of Electronic Engineering City University Of Hong Kong
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Lam Y.w.
Department Of Electronic Engineering City University Of Hong Kong
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Webb D.p.
Department Of Electronic Engineering City University Of Hong Kong
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Zou X.
Department of Electronic Engineering, City University of Hong Kong
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Chan Y.C.
Department of Electronic Engineering, City University of Hong Kong
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Xu Z.
Department of Solid State Electronics, Huazhong University of Science and Technology
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Zou X
Department Of Meteorology Florida State University
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徐 重陽
華中理工大學 固體電子學系
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Chan Y.c.
Department Of Electronic Engineering City University Of Hong Kong
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鄒 雪城
Department of Meteorology, Florida State University
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陳 〓昌
Department of Electronic Engineering, City University of Hong Kong
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徐 重陽
Department of Solid State Electronics, Huazhong University of Science and Technology
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- a-Si TFT的界面效應
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