TECHNOLOGIES AND DEVELOPMENT OF FULL COLOR FIELD EMISSION DISPLAY DEVICES
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概要
- 論文の詳細を見る
We repdrt the development of 4" full color FED devices with the reliability analysis. Each pixel is composed of 490O tips, which results in 80 million tips for 4" color diagonal panel. The hole pattern of the chromium gate is maintained at 1.1±0.1μm. The low voltage phosphors such as Y_2O_2S:Eu, ZnS:(Ag,Cl,Al), ZnS:(Cu,Al,I) for red, blue and green with special surface treatments are developed and their related screening technologies are studied with electrical analysis. The fully moving images are displayed at the anode bias of 250 volts. The emission current profile of the field emission for the color anode is well investigated with the color anode patterning. We analyze the relationship between the electron emission profiie on the full panel. The brightness at white color mode of color FED is approximately 80cd/m^2.
- 社団法人電子情報通信学会の論文
- 1997-02-14
著者
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Kang Jung
The National Creative Research Initiatives Center For Electron Emission Source Samsung Advanced Inst
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Kim J
Fed Project Team Samsung Advanced Institute Of Technology
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Kim J
Samsung Advanced Inst. Technol. Suwon Kor
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Kim Jong
Fed Project Team Samsung Advanced Institute Of Technology
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Kim J.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Hong J.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Park N.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Choi J.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Kang J.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Jang J.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Ryu Y.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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You Y.
Display Materials Lab, Materials sector Samsung Advanced Institute of Technology
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Kang J.
The National Creative Research Initiatives Center For Electron Emission Source Samsung Advanced Inst
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Jang J.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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Park N.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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Kang J.h.
Pohang University Of Science And Technology Electronic And Electrical Engineering
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Choi J
Rist
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Kang J.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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You Y.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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Kim J.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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Ryu Y.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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Hong J.
Display Materials Lab Materials Sector Samsung Advanced Institute Of Technology
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