A・P2000-32 / SAT2000-29 / MW2000-32 等価端部電磁流によるエッジ回折の時間領域解析
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概要
- 論文の詳細を見る
任意形状高周波インパルスを入射波として、任意の曲率を持つ完全導体散乱体による電磁界の過渡散乱を解析するために、修正エッジ法の端部電磁流を用いた時間領域でのエッジ回折の解析法を提案する。散乱界の最終表現を簡単にするために、解析的に計算を行う。これにより、3次元の任意の完全導体散乱体による散乱界を散乱体の周囲の線積分により簡単に評価できる。
- 社団法人電子情報通信学会の論文
- 2000-07-19
著者
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Ando Makoto
The Authors Are With The Department Of Electrical And Electronic Engineering Tokyo Institute Of Tech
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Cui Suomin
The Authors Are With The Department Of Electrical And Electronic Engineering Tokyo Institute Of Tech
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Sakina Ken-ichi
The Authors Are With The Department Of Electrical And Electronic Engineering Tokyo Institute Of Tech
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BRUCKERT Elise
東京工業大学 電気電子工学専攻
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CUI Suomin
東京工業大学 電気電子工学専攻
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SAKINA Ken-ichi
東京工業大学 電気電子工学専攻
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ANDO Makoto
東京工業大学 電気電子工学専攻
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Bruckert Elise
東京工業大学電気電子工学専攻
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- A・P2000-32 / SAT2000-29 / MW2000-32 等価端部電磁流によるエッジ回折の時間領域解析
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