Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
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概要
- 論文の詳細を見る
We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disapper. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.
- 社団法人電子情報通信学会の論文
- 1994-02-25
著者
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Ricco Bruno
The Deis University Of Bologna
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Wada Tetsunori
The Ulsi Laboratories Research And Development Center Toshiba Corporation
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Fiegna Claudio
The Deis University Of Bologna
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Iwai H
Matsushita Electric Industrial Co. Ltd. Osaka‐shi Jpn
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Tsuboi Yoshiroh
the ULSI Laboratories, Research and Development Center, TOSHIBA CORPORATION
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Sangiorgi Enrico
the DEIS, University of Bologna
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Katsumata Yasuhiro
the ULSI Laboratories, Research and Development Center, TOSHIBA CORPORATION
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Iwai Hiroshi
the ULSI Laboratories, Research and Development Center, TOSHIBA CORPORATION
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Tsuboi Yoshiro
Toshiba Corp.
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Katsumata Yasuhiro
The Ulsi Laboratories Research And Development Center Toshiba Corporation
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Sangiorgi Enrico
The Deis University Of Bologna
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