Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• Narrow emitter effects in self-aligned bipolar transistors are discussed. Besides the increase of a non-ideal base current, the decrease of an ideal base current is newly observed, and a consequent fluctuation of the current gain becomes wider in the smaller emitter geometry. Both phenomena are attributed to the reduction of an emitter-impurity concentration.

• 社団法人電子情報通信学会の論文
• 1994-01-25

著者

• Miyakawa Hiroyuki

  Semiconductor Device Engineering Laboratory Toshiba Corporation

• Hidaka Osamu

  The Research And Development Center Toshiba Corporation

• Niitsu Youichiro

  Semiconductor Device Engineering Laboratory, TOSHIBA CORPORATION

• Niitsu Youichiro

  Semiconductor Device Engineering Laboratory Toshiba Corporation

• Niitsu Youichiro

  Semiconductor Device Engineering Lab. Toshiba Corporation

関連論文

• Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors
• Methodology for Latchup-Free Design in Merged BiPMOSs
• Measuring AC Emitter and Base Series Resistances in Bipolar Transistors

スポンサーリンク