Highly Sensitive OBIRCH System for Fault Localization and Defect Detection(Special Issue on Test and Diagnosis of VLSI)

概要

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We have improved the optical beam induced resistance change(OBIRCH)system so as to detect(1)a current path as small as 10-50 μA from the rear side of a chip, (2)current paths in silicide lines as narrow as 0.2μm, (3)high-resistance Ti-depleted polysilicon regions in 0.2μm wide silicide lines, and(4)high-resistance amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5mm×5mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.
社団法人電子情報通信学会の論文
1998-07-25