A Substrate Current Model for Analog CMOS Circuit Simulations

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概要

• 論文の詳細を見る

• This paper presents an accurate and semi-physical MOSFET substrate current model suitable for analog circuit simulations. The proposed model is valid over a wide range of the electric field present in MOSFET devices and is continuous from cut off region to saturation region. The developed model was implemented into the circuit simulator, SPICE3. Benchmark of the developed model was achieved by making comparisons between the measured data and the simulated data for MOSFET devices, push-pull CMOS inverters, a regulated cascode CMOS operational amplifier. The experimental results showed that the developed model was more accurate and computationally efficient than the conventional models.

• 社団法人電子情報通信学会の論文
• 1995-12-25

著者

• Yoon Kwang

  Department Of Electronic Engineering Inha University

• Seon Jong

  Lg Industrial Systems Co.

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• Enhancement of Data Retention Time in Dynamic Random Access Memory through Optimization of Sidewall Oxidation Precleaning (0.13 μm Tech 512 Mb)

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