Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique(Microwaves, Millimeter-Waves)
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概要
- 論文の詳細を見る
Noise characteristics of GaAs metal-semiconductor field effect transistors (GaAs-MESFETs) with scaled-down dimensions are analyzed and modeled using a physics-based circuit simulator employing the Monte Carlo (MC) particle technique. The microscopic dynamics of electrons is also analyzed to investigate the mechanism of noise generation in a channel. Noise spectral densities of GaAs-MESFETs with two different geometries are estimated by evaluating fluctuations in instantaneous terminal currents. Then, minimum noise figures, Fmin, and noise figure circles are estimated using the noise spectral densities and Y-parameters. Because of an increase in y_<21> and suppression of an increase of noise spectral density, the device with an n^+-region extending to below the drain-side edge of the gate contact exhibits a smaller noise figure. Suppression of the electron velocity fluctuation caused by electron transitions to higher valleys in a high electric field region is responsible for the noise suppression.
- 社団法人電子情報通信学会の論文
- 2005-07-01
著者
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Nakayama Masahiro
Department Of Internal Medicine Division Of Cardiology Showa University Fujigaoka Hospital
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Fujishiro Hiroki
Tokyo Univ. Of Sci. Noda‐shi Jpn
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Fujishiro Hiroki
Department Of Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of S
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NARITA Shinichi
Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of
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Nakayama Masahiro
Department Of Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of S
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Narita Shinichi
Department Of Applied Electronics Faculty Of Industrial Science And Technology Tokyo University Of S
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