Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays(Special Issue on Current Electromechanical Devices and Their Materials with Recent Innovations)
スポンサーリンク
概要
- 論文の詳細を見る
Silicone contamination due to SiO_2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO_2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate(operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.
- 社団法人電子情報通信学会の論文
- 2000-09-25
著者
関連論文
- Effect of a Third Doping Agent to Ag-Pd Alloy on the Formation of Oxide Films Grown on the Surface
- Peculiar Patterns of SiO_2 Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment
- Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays(Special Issue on Current Electromechanical Devices and Their Materials with Recent Innovations)
- Improvement in Contact Resistance Characteristics of Ag-Pd Alloy due to a Third Doping Agent
- Special Issue on Electromechanical Devices and Their Materials
- Contact Behaviors of New Material for Micro Relays
- Correlation between Contact Resistance Characteristics and Scanning Tunneling Microscopy Images for Ag-Pd Alloy with Some Example Additives(Contact Phenomena, IS-EMD2004-Recent Development of Electro-Mechanical Devices)
- Influence of Silicone Vapor on Micro-Motor Reliability (国際セッションIS-EMD2002〔英文〕)
- Influence of Silicone Vapor on Micro-Motor Reliability
- Acceleration Factor for Tarnish Testing of Silver Contact Surface
- Contact Resistance Performances at Low Temperature
- Influence of Silicone Vapor on Micro-Motor Reliability(Recent Development of Electro-Mechanical Devices (IS-EMD 2002))
- Correlation between Contact Resistance Characteristics and STM Images for Ag-Pd Alloy with Some Additives(Session 7 : Contact Phenomena)
- Contact Behaviors of New Material for Micro Relays (国際セッションIS--EMD 2003) -- (Session 6 Contact Phenomena(2))