A 40GHz f_T SATURN Transistor Using 2-Step Epitaxial Base Technology (Special Issue on Ultra-High-Speed LSIs)
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概要
- 論文の詳細を見る
We have developed the Epi-Base SATURN process as a silicon bipolar process technology which can be applied to optical transmission LSIs. This process technology, to which low temperature selective epitaxial growth technology is applied, is based on the SATURN process. By performing selective epitaxial growth for base formation in 2 steps, transistors with a 40GHz maximum cut-off frequency have been fabricated. In circuit simulation based on SPICE parameters of transistors, the target performance required for 2.4 Gbit/s optical interface LSIs has been achieved.
- 社団法人電子情報通信学会の論文
- 1996-04-25
著者
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YAMANO Koji
Tsukuba Research Center, SANYO Electric Co., Ltd.
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Fujimaki Hirokazu
Electronic Devices Group Oki Electric Industry Co. Ltd.
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Yamano K
Sanyo Electric Co. Ltd. Gifu Jpn
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Yamano Koji
Department Of Electronics Faculty Of Engineering Yamaguchi University
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Yamano Koji
Sanyo Erectric Co. Ltd.
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Yamano Koji
Electronic Devices Group Oki Electric Industry Co. Ltd.
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SUZUKI Kenichi
Electronic Devices Group, Oki Electric Industry Co., Ltd.
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Suzuki Kenichi
Electronic Devices Group Oki Electric Industry Co. Ltd.
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