Enhanced on-chip SiGe varactors fabricated by RPCVD

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概要

• 論文の詳細を見る

• Two high quality on-chip varactors were developed using SiGe HBT process. The epitaxial layers of the varactor were grown by reduced pressure chemical vapor deposition (RPCVD) and overall sequence followed standard silicon process. Our new varactors showed higher normalized Q factors (100 and 160 at 2.5 GHz) than that of conventional SiGe bipolar varactor (70at 2.5 GHz) although they suffered small variance of capacitance when Q factor was high and vice versa. More details of measurement and analysis were presented based on the structural characteristics of the varactors.

• 社団法人電子情報通信学会の論文
• 2001-06-29

著者

• Lee Seung-yun

  Electronics And Telecommunications Research Institute Microelectronics Laboratory

• Lee Seung-yun

  Electronics And Telecommunications Research Institute (etri)

• Kang J‐y

  Electronics And Telecommunications Res. Inst. Daejeon Kor

• Mheen Bongki

  Electronics and Telecommunications Research Institute, Microelectronics Laboratory

• Suh Dongwoo

  Electronics and Telecommunications Research Institute, Microelectronics Laboratory

• Kang Jin-Yeoung

  Electronics and Telecommunications Research Institute, Microelectronics Laboratory

• Suh D

  Etri Kor

• Suh Dongwoo

  Electronics And Telecommunications Research Institute Microelectronics Laboratory

• Suh Dongwoo

  Center For Advanced Aerospace Materials Pohang University Of Science And Technology

• Mheen Bongki

  Electronics And Telecommunications Research Institute Microelectronics Laboratory

• Kang Jin-yeoung

  Electronics And Telecommunications Research Institute Microelectronics Laboratory

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