An Improved Physical Model for the Analysis of High Frequency Active Devices
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概要
- 論文の詳細を見る
This report describes an improved time-domain simulation model for high frequency active devices using the FDTD method. The model is based on the Boltzmann's transport equation to describe the physical transport of the carriers. A 2D structure of a MESFET including the air part above the device is considered. It is shown that the inclusion of the fringing fields above the device enhances the accuracy of the simulation. The analysis includes I-V curves as well as device gain at a wide frequency range.
- 社団法人電子情報通信学会の論文
- 2000-09-15
著者
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Kawasaki S.
Department Of Materials Engineering Science Graduate School Of Engineering Science Osaka University
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Alsunaidi M
東海大 工
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Alsunaidi M.a.
Department Of Communications Engineering Tokai University
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