The Effect of TiO_2 Underlayer on Crystal Structure and Magnetic Properties of Hexagonal Barium-Ferrite(BaM)Thin Films

概要

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The BaM film and TiO_2 underlayer were prepared on(100)oriented bare Si substrate by using a RF/DC magnetron sputtering. BaM/TiO_2/Si thin films were crystallized at 750℃ and 800℃ by post-annealing. For most of BaM/TiO_2/Si thin films the coercivity values of the film prepared at 750℃ were higher than those of the film prepared at 800℃. High gas pressure was more effective for BaM/TiO_2/Si thin film showing good magnetic properties. The dependence surface morphology on annealing temperature was confirmed in BaM/TiO_2/Si film. Surface morphology was changed from elongated type grains to pop-corn type grains as increase in total gas pressure.
社団法人電子情報通信学会の論文
2001-11-01