CoSiB/Cu/CoSiB膜の歪-インピーダンス特性

概要

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A strain sensor element utilizing inverse magnetostrictive effect and magnetoimpedance effect was developed, and the strain-impedance properties of the element were investigated. The Strain-Impedance (SI) element constructed from a CoSiB/Cu/CoSiB layered film was prepared on a Corning No. 0313 glass substrate by magnetron sputtering under a magnetic field. Co_<73>Si_<12>B_<15> negative magnetostriction films (λ=-6×10^<-6>) were selected as magnetostrictive layers, and magnetic anisotropy was induced parallel or perpendicular to the applied strain direction. In the SI element, applied strain ε was detected as a change in impedance Z, inductance L or resistance R in the range from 1 MHz to 15 MHz. By applying strain (ε=±2×10^<-3>), we dramatically changed the impedance through the change in permeability of the magnetostrictive layers. The maximum gauge factor, Gmax, which was defined as the maximum fractional change in impedance to strain, (ΔZ/Z)/ε, was 1500-2000 at 1-15 MHz. These values were much larger than those of the single-layer CoSiB element. This layered SI element will be very useful for sensing small amounts of strain.
社団法人日本磁気学会の論文
2000-04-15