Effects of Ion Beam Etching on the Magnetic Properties of Permalloy Thin Films

概要

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Permalloy thin films deposited by rf magnetron sputtering are ion beam etched with the ion energy of 800 eV, and the effects of ion beam etching on the magnetic properties are investigated. Magnetic softness deteriorates with the etching indicated by the increase of coercivity, the difficulty of saturation, and the decrease of the remanence ratio. The magnetization reversal for etched sample is controlled by domain wall pinning, and wall pinning strength is increased by IBE. The angular dependence of coercivity shows that the magnetization reversal of etched specimen is governed to some extent by the spin rotation. The δM measurement reveals that the non-uniform rotation of magnetization is dominant in etched sample. With the increased domain wall pinning, the non-uniform rotation of magnetization in dispersed anisotropy to be responsible for the difficulty of saturation.
社団法人日本磁気学会の論文
1999-01-20