酸素雰囲気中蒸着により作製した(Co,Fe)-Oおよび(Co,Fe)_<75>(Al,Si)_<25>-O薄膜の磁気抵抗効果 (<特集>多層膜・人工格子・グラニューラー)

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The structure, magnetization, and magnetoresistance were investigated for (Co,Fe)-O, and (Co,Fe)_<75>(Al,Si)_<25>-O thin films evaporated in an oxygen atmosphere with various incident angles α. The MR ratios at room temperature of Co-O and Co_<75>A1_<25>-O thin films prepared at α=0° α=20° were about 2% and 8%, respectively. With increasing α, the MR ratio decreased. The temperature dependence of the resistivity and the dependence of magnetoresistance on the magnetization indicate that the observed magneto-resistance originates in spin-dependent tunneling of electrons through an insulator. Analysis of FT-IR spectra showed that Al_2O_3 existed in the Co_<75>Al_<25>-O thin film, which exhibited a large MR ratio.
1997-04-15