Co-Cr垂直磁気異方性膜成膜における背圧改善効果 (<特集>垂直磁気記録)

概要

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The effects of improved background pressure on the deposition of Co-Cr perpendicular anisotropy films were investigated. To obtain a high vacuum, an aluminum alloy chamber was used, whose inside wall was subjected to the EL process ro reduce outgassing from the chamber. The background pressure reached 4 × 10^<-8> Torr after chamber baking. The pressure was changed by the addition of nitrogen to the atmosphere. In spite of the nitrogen addition, the percentage of H_2O in the atmosphere was greater than that of N_2. As a result, we were able to obtain a high perpendicular coercive force and a high crystallinity for the deposition of Co-Cr at a low background pressure. As regards the recording performance, a perpendicular double-layered medium with the Co-Cr recording layer deposited in a high vacuum showed larger output than one deposited in a low vacuum.
社団法人日本磁気学会の論文
1997-04-15