Growth and Process Induced Defects in Si Crystals(<Special Issue>Growth and Characterization of Silicon Crystals)

概要

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Silicon is most abndant metalic element of the lithosphere constituent elements in the forms of compounds with oxygen. Today, dislocation-free silicon crystals are basic material in the electronics devices because of resource and its properties. Growth and process induced defects in silicon crystals are mutually related defects. Both defects are connected by oxygen, carbon and other heavy metalic impurities through the solid-liquid interface at growing time. Geometrical stabilities of wafers, required from micro-lithography for Large Scale Integration fabrication, are also connected to solid-liquid interface of crystal growth. New problems are occurred in an interface of silicon-oxide, oxide-metal, poly-silicon-metal and/or silicon-metal by decreasing of the thickness with microminiaturization of device and those problems will solved by view point of crystal growth in solid.
日本結晶成長学会の論文
1977-06-25