Si(001)微斜面におけるドメイン反転現象の経路確率法による微視的解析(<特集>西岡一水先生追悼号)

概要

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The microscopic mechanism of the current-induced domain conversion phenomena on the Si (001) vicinal surface is discussed on the basis of the microscopic kinetic processes of atoms on the surface. In the migration process of atoms our model takes four effects into account: the anisotropic migration on the Si (001) reconstructed surface, the anisotropy of lateral bond between atoms, the electromigration effect and the Schwoebel effect. Based on the kinetic rates for the migration and evaporation of atoms the kinetic equations for the time evolution of the Si (001) vicinal surface are derived by using the pair approximation of the path probability method (PPM) of non-equilibrium statistical method. The domain conversion mechanisms are explained consistently by the microscopic kinetics of atoms. The results of the PPM calculation are in quantitatively good agreement with those of the Monte Carlo simulation.
日本結晶成長学会の論文
1999-03-31