ZnSe系青,緑色半導体レーザーとMBE成長(<特集>ヘテロエピタキシー機構)
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概要
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Blue and green lasers have been made from ZnSe-based II-VI compounds. These laser wafers are grown by only molecular beam epitaxy (MBE), since successful doping techniques have been obtained in MBE process. Low-resistivity n- and p-type ZnSe was accomplished with Cl doping and nitrogen radical doping, respectively. MBE growth of n-type ZnSe: Cl and p-type ZnSe: N, and optical and electrical properties of these layers are described. Recent advances in znSe-based lasers are also reported.
- 日本結晶成長学会の論文
- 1993-12-25
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関連論文
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- ZnSe系青,緑色半導体レーザーとMBE成長(ヘテロエピタキシー機構)
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