LEC法により育成されたアンドープGaAs結晶の転位および微小欠陥

概要

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Examination by a transmission electron microscopy (TEM) was conducted on configuration, size and density of dislocations and microdefects in undoped (100)GaAs wafers, which were grown from As-rich, nearly stoichiometric and Ga-rich raw materials by the liquid-encapsulated Czochralski (LEC) method. Most of the dislocations were short ones laid on {111} slip planes. Others were long dislocations parallel to the (100) wafer surfaces, dislocation networks, dislocation loops and/or dislocation bundles. Those dislocations sometimes accompanied precipitates, and the dislocation with precipitates increased their density with an increase of the As concentration in the raw materials. In addition, total dislocation density was high in the wafers grown from non-stoichiometric raw materials. On the other hand, TEM showed that the precipitates took some outlines such as rounds, squares or hexagons. They formed preferentially at the dislocations rather than in a matrix, and became greater on density and size with an increase of the As concentration in the raw materials.
日本結晶成長学会の論文
1997-07-10