Si,Ge基板上のGaAs成長層の評価

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概要

• 論文の詳細を見る

• Anti-phase disorder, which is well-known problem in the growth of polar GaAs on nonpolar substrate, is completely suppressed using slightly inclined (100) plane toward [011], in contrast to the case of exactly oriented (001) plane and inclined (100) plane toward [100]. It is also found that the [011] orientation of GaAs are always aligned to the inclined direction. Phase locking step model is proposed to understand the elimination of the anti-phase disorder, where the particular atoms with one dangling bond appear at the surface step and they preferentially bond with Ga atoms. Optical and electrical properties of GaAs/Ge layer without the anti-phase disorder are comparable to those of the homoepitaxial layer on GaAs.

• 日本結晶成長学会の論文
• 1987-04-25

著者

• 室谷 利夫

  三菱電機光波研

• 室谷 利夫

  三菱電気(株)LSI研究所

• 水口 一男

  三菱電気(株)LSI研究所

関連論文

• Defects and Characterization(ICVGE-7(第7回気相成長・エピタキシー国際会議))
• Si,Ge基板上のGaAs成長層の評価
• GaAsの分子線エピタキシャル成長 : 融液成長と蒸着膜

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