シリコンウェーハにスパッタリングしたアルミニウム薄膜のX線応力測定(<小特集>先進材料と信頼性解析・評価)

概要

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A new X-ray method was proposed to measure the triaxial residual stress in Al thin films sputtered on (100)-oriented silicon single-crystal wafers. The film had [111] fiber texture perpendicular to the film. The linear relation between strain and sin^2 ψ obtained from Al 222 and 311 diffractions was used to determine the triaxial residual stress in Al films. The residual stress in Al films was equibiaxial tension, and the magnitude decreased with increasing film thickness. The residual stress determined by the curvature method was nearly equal to that determined by X-ray analysis. The loading stress in Al-coated film was found to be biaxial even under uniaxial tension of Si substrate. The stress value measured by the X-ray method agreed with the prediction based on the mismatch of Poisson's ratio between coating and substrate.
社団法人日本機械学会の論文
1995-09-25