CVD法によるβ-SiC及びSiC/TiCコンポジットの成長

概要

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The multi-star β-SiC and SiC/TiC composites have been deposited by CVD method on graphite substrate. The precursors, SiCl_4, TiCl_4 and C_3H_8 were used silicon, titanium and carbon sources, respectively, and hydrogen as a carrier gas for deposition. The morphology of surface and polished cross section for the SiC and SiC/TiC composite deposited was observed by SEM. The crystal orientations and microstructrure were analyzed XRD and TEM. The growth propagation of the multi-star β-SiC and the SiC/TiC composites is attributed to the twin-plane-reentrant-edge mechanism. The[220]is an intensely preferred orientation as the twin axis of interpenetration twin configuration. The interface of SiC/TiC is severely strained as found in TEM image and dislocations are generated in the TiC phases owing to the mismatch of coefficient of thermal expansion.
社団法人日本セラミックス協会の論文
1996-03-01