CVD法により作製したβ-SiC膜の形態と赤外分光特性

概要

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Silicon carbide deposits were grown on graphite substrates in a horizontal water-cooled quartz tube by thermal decomposition of high purity methyltrichlorosilane (MTS) carried by hydrogen. Morphological and infrared property analyses of films deposited by different process parameters were performed by using scanning electron microscopy (SEM) and IR spectrometry. The morphology of deposits, such as smooth-feature-less, nodular, dendritic, faceted, and particles, etc., obtained by the CVD process was dependent on the experimental variables. The dependence of the kinetics of deposition on substrate temperature, reaction pressure and H_2/MTS ratio was investigated.
社団法人日本セラミックス協会の論文
1993-01-01