CuO拡散とエキシマレーザー照射によるSrTiO_3単結晶でのpn及びn-p-n構造形成とその電気的性質

概要

論文の詳細を見る
N-type and p-type semiconducting regions were formed on an insulating SrTiO_3 single crystal by KrF excimer laser irradiation at non-treated and CuO-diffused surfaces, respectively. The n-type and p-type semiconductivity was confirmed using Hall coefficient measurement. The pn junction showed rectifying characteristics. An n-p-n structure was formed by laser-irradiation on a surface including a thin(1μm in width)CuO-diffused layer. It shows nonlinear I-V characteristics with a nonlinear coefficient of 7, as observed in semiconducting SrTiO_3 ceramics with acceptor-diffused grain boundaries. This fabrication method was found to be effective for realizing the pn and n-p-n electrical properties at desired positions on insulating oxides.
社団法人日本セラミックス協会の論文
1999-02-01