ゾル-ゲル法を用いたPbBi_4Ti_4O_<15>及びPb_2Bi_4Ti_5O_<18>薄膜の作製

概要

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PbBi_4Ti_4O_<15>(PBT) and Pb_2Bi_4Ti_5O_<18>(P2BT) thin films were fabricated on Pt/Ti/SiO_2/Si substrates by sol-gel method, and their ferroelectric properties were investigated. Two processes were examined for the preparation of PBT thin films. In the process which used Bi-acetate as a starting material, the single PBT phase thin films could be obtained by inserting a Bi-rich buffer layer between the Pt electrode and the PBT film. In the other process which used Bi-Ti complex alkoxide, the PBT single phase was obtained without the buffer layer. P2BT thin films prepared by the latter process showed about two times larger remnant polarization(2P_r)values of 12 μC/cm^2 compared with 2P_r=7 μC/cm^2 for the PBT thin film, coinciding with the tendency reported for single crystals. Both the PBT and P2BT thin films showed good fatigue endurance up to 1 × 10^9 switching cycles.
社団法人日本セラミックス協会の論文
1999-05-01