熱プラズマ合成ダイヤモンド膜の電気抵抗

概要

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Electrical resistivity of diamond films grown by a thermal plasma chemical vapor deposition technique was measured from room temperature to 870°C at 3×10-5-1×10-6 Torr. The surface-treatments of the films were carried out in the following ways, i.e., (1) immersing in an aqua regia at 75°C for a week, (2) immersing in a solution of CrO3 in H2SO4 for a day, (3), (4) heat treating at 400° and 550°C respectively in air for two hours. Electrical contacts on the resultant films were made by gold electrodes deposited by an ion sputtering technique in air at 0.2 Torr and argon gas at 0.2 Torr, respectively. The films with gold electrodes deposited in air had peaks in electrical resistivity at temperature of 400°-530°C, but the peaks did not appear with the gold electrodes deposited in argon gas and without gold electrode. It can be explained that this phenomenon was caused by the desorption of oxygen molecules, which were adsorbed from an air plasma generated by the ion sputtering, from the diamond surface and the diamond/electrode interface, further by subsequent reconstructions of the diamond surfaces.
社団法人日本セラミックス協会の論文
1991-12-01