Al_4SiC_4焼結体の作製と耐酸化性

概要

論文の詳細を見る
The oxidation mechanism of a dense Al_4SiC_4 body in the temperature range of 1250-1500℃ was investigated using thermo-gravimetry (TG) measurements. Pure Al_4SiC_4 powder was synthesized from Al,Si and C powder, and a dense body was prepared by pulse electronic current sintering(PECS). The oxidation behavior of the body was indicated passive oxidation, and a superior oxidation resistance. Mullite and corundum formed on the surface of the oxidized body, the thickness of the oxidized layer formed by oxidizing at 1500℃ for 10 h being about 100μm. The protective layer inhibited oxidation inward the Al_4SiC_4 body. Activation energy and frequency factor for oxidation of Al_4SiC_4 were 483 kJ・mol^-1 and 1.86×10^8kg^2・m^-4・S^-1 at temperatures 1300〜1500℃, respectively.
社団法人日本セラミックス協会の論文
2002-11-01