T_c Enhancement Observed in Si,Ge and GaP under Low-Temperature Pressurizing
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概要
- 論文の詳細を見る
Pressure-induced superconductivities in Si, Ge and GaP were measured along twodifferent paths on the P-T diagram. The superconducting transition temperatures,T.'s, were enhanced when pressure was continuously increased from 1 bar at liquidhelium temperature. The T. of GaP is greatly enhanced from 3.9to 10.4 K by low-tem-perature pressurizing.Ihigh pressure, superconductivity, phase transition
- 社団法人日本物理学会の論文
- 1988-10-15
著者
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TACHIKAWA Kyoji
Faculty of Engineering, Tokai University
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Tachikawa Kyoji
Tokai University
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TACHIKAWA Kyoji
National Research Institute for Metals, Tukuba Laboratories
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Tachikawa Kyoji
National Research Institute For Metals
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Kawamura Haruki
National Research Institute For Metals
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Kawamura Haruki
National Research Institute For Metals:basic Research Laboratories Himeji Institute Of Technology
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Tachikawa K
Tokai Univ. Kanagawa Jpn
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Tachikawa K
Tokai University
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