Nonradiative Transitions in Deep Impurities in Semiconductors-Study in a Semiclassical Model

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概要

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• Nonradiative transitions in the deep impurity states in semiconductors arestudied by a semiclassical model, in which the lattice distortion around theimpurity is approximated as a classical harmonic oscillator modulating thepotential depth for the electron. An integral equation is derived and solvednumerically describing the nonadiabatic transition from the bound state to thescattering states which corresponds to the thermal ionization. Peculiar featuresin the transition dynamics arc clarified in contrast with the transitions betweendiscrete levels. In the adiabatic limit, which covers the situation at high tem-peratures in real semiconductors, the transition rate obeys the Arrhenius lawwith the pre-exponential factor given by the phonon frequency as pointed outby Sumi.

• 社団法人日本物理学会の論文
• 1984-05-15

著者

• Kayanuma Yosuke

  Department of Physics, Faculty of Science, Tohoku University

• Kayanuma Yosuke

  Department Of Physics Faculty Of Science Tohoku University

• FUKUCHI Susumu

  Department of Physics,Faculty of Science,Tohoku University

• Fukuchi Susumu

  Department Of Physics Faculty Of Science Tohoku University

• Kayanuma Yosuke

  Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531

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