Self-Magnetoresistance Effect in Bismuth

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概要

• 論文の詳細を見る

• The self-magnetoresistance of Bi has been calculated for the pre-pinch regime, based on the energy band model proposed by Abeles and Meiboom. The inward-driven electron-hole flow contributes to departures from Ohm's law in the following ways: a) particle flow due to the Lorentz force of the self-magnetic field gives a pure self-magnetoresistance effect, which decreases the conductivity, b) if the life time of the electron-hole Pairs is not too short, this particle flow distorts the carrier density distribution, creating a diffusion force which opposes the Lorentz force. This effect partially compensates the pure self-magnetoresistance effect, c) if the surface recombination velocity is not zero, the particle flow increases the carrier density, so that the conductivity is increased.

• 社団法人日本物理学会の論文
• 1964-04-05

著者

• TOSIMA S.

  Laboratories RCA, Inc., C.P.O.

• Tosima Soitiro

  Laboratories Rca Inc.

• Tosima S.

  Laboratories Rca Inc.

• Hir0ta Ryogo

  Laboratories Rca Inc. C.p.o.

関連論文

• Electron-Hole Scattering in Solids Exhibiting Band-Gap Impact Ionization
• Experimental Evidence for Helical Instabilities in a Semiconductor Plasma
• Theory of Double Injection into a Semiconductor of Finite Cross-Section
• Diffusion Size Effect in Bismuth
• Note on the Wigner Representation of Quantum Operators
• Velocity Reversal of Density Perturbation in Electron-Hole Plasmas in n-InSb
• Hot Carrier Double Injection in n-InSb
• Self-Magnetoresistance Effect in Bismuth
• Spatial Dependence of Impact Ionization in n-InSb
• A Geometrical Method of Investigating Dispersion Relations

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