Spatial Dependence of Impact Ionization in n-InSb

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概要

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• The spatial dependence of the impact ionization in n-InSb was investigated and a current-controlled negative resistance was observed near the cathode of the sample undergoing impact ionization. The critical electric field for the negative resistance was the same as that of the impact ionization. The negative resistance has been explained theoretically as the result of the double injection of holes and hot electrons into the region near the cathode from the impact ionization region and the cathode respectively. When the injection is strong enough, this process allows the existence of a low field (negative resistance) region over a distance from the cathode much greater than the diffusion length.

• 社団法人日本物理学会の論文
• 1967-04-05

著者

• Tosima Soitiro

  Laboratories Rca Inc.

関連論文

• Experimental Evidence for Helical Instabilities in a Semiconductor Plasma
• Theory of Double Injection into a Semiconductor of Finite Cross-Section
• Diffusion Size Effect in Bismuth
• Velocity Reversal of Density Perturbation in Electron-Hole Plasmas in n-InSb
• Hot Carrier Double Injection in n-InSb
• Self-Magnetoresistance Effect in Bismuth
• Spatial Dependence of Impact Ionization in n-InSb
• A Geometrical Method of Investigating Dispersion Relations

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