Diffusion Size Effect in Bismuth

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概要

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• The galvanomagnetic properties of thin bismuth samples have been found to exhihit some strong dependences on sample size at 77°K, involving a reduction in the transverse magnetoresistance and Hall coefficient with decreasing thickness. It has been shown theoretically and experimentally that this size-effect is related to the diffusion length rather than to the mean free path. Comparison of experiments with theory gives a value for the effective electron lifetime, τ〜4×10^<-10>sec. The magnetic field dependence of the transverse magnetoresistance is also discussed.

• 社団法人日本物理学会の論文
• 1964-11-05

著者

• Tosima Soitiro

  Laboratories Rca Inc.

• Hattori Takeo

  Laboratories Rca Inc.

• TOSIMA Soitiro

  Laboratories RCA, Inc.,

関連論文

• Experimental Evidence for Helical Instabilities in a Semiconductor Plasma
• Theory of Double Injection into a Semiconductor of Finite Cross-Section
• The Effect of Self-magnetic Field on the Galvanomagnetic Effects in Bismuth
• A Transverse Voltage in a Longitudinal Magnetic Field in Bismuth
• Generation of Sound Waves by a Self-Pinched Plasma in a Solid
• Self-Magnetoresistance and Pinch Effect in Bismuth
• "Diffusion Size Effect" in Bismuth at Liquid Helium Temperatures
• Diffusion Size Effect in Bismuth
• Velocity Reversal of Density Perturbation in Electron-Hole Plasmas in n-InSb
• Hot Carrier Double Injection in n-InSb
• Self-Magnetoresistance Effect in Bismuth
• Spatial Dependence of Impact Ionization in n-InSb
• A Geometrical Method of Investigating Dispersion Relations

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