Measurement of Seebeck Effect in Plastically Bent Germanium
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概要
- 論文の詳細を見る
The changes of the thermoelectric powers and the electrical resistivities of several kinds of n-Ge and p-Ge due to plastic bending are measured in the temperature covering the transition- and intrinsic-ranges and analyzed by the theory. The value of the dislocation-acceptor level is estimated to be about 0.2 eV. The n-Ge sample near intrinsic is converted to p-type by the bending, while n-Ge with low resistivity and p-type samples show the slight effect. The difference of n-p conversion due to the deformation from the thermal conversion is discussed.
- 社団法人日本物理学会の論文
- 1961-08-05
著者
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Ohta Tokio
Department of Electrical Engineering
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Yamashita Tadayoshi
Department Of Physics Defense Academy
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Yamashita Tadayoshi
Department Of Mathematics And Physics Defence Academy
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Yamashita T.
Department of Mathematics and Physics, Defence Academy
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