Theory of Seebeck Effect in Plastically Deformed Semiconductors
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概要
- 論文の詳細を見る
The effects of the reduction of free electron density due to the dislocation-acceptors and the scattering due to the space charge around the dislocation on the thermoelectric power of n-type materials are theoretically investigated in the temperature covering from impurity- to transition-range and compared with the experimental data for near intrinsic n-Ge in only the transition range of temperature. In the intrinsic range of temperature the scattering effect due to the lattice deformation around the dislocation is discussed and compared also with the experimental data.
- 社団法人日本物理学会の論文
- 1961-08-05
著者
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Ohta Tokio
Department of Electrical Engineering
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Ohta Tokio
Department Of Physics Defense Academy By
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Ohta T.
Department of Circulation and Respiration,Research Institute of Environmental Medicine, Nagoya Unive
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