High-Pressure Studies of Absorption and Luminescence Spectra in 3C-SiC

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概要

• 論文の詳細を見る

• The pressure dependence of absorption spectra in 3C-SiC crystals has been studiedup to 14 GPa at room temperature by using a diamond anvil cell. The pressurederivative of the fundamental gap between T. and X. band extrema is found to be- 1.9 meV / GPa, the absolute value of which is anomalously small, in contrast withthe values usually observed for T. -X. (or A.) gaps in the diamond and zinc-blendestructure semiconductors or insulators. Luminscence spectra measured at 1.8 K revealthat the binding energy of excitons trapped by donors increases drastically atpressures higher than 4 GPa.

• 社団法人日本物理学会の論文
• 1989-08-15

著者

• Kobayashi Michihiro

  Faculty Of Engineering Science Osaka University

• Shinohara M

  Ntt Multimedia Business Dep. Tokyo

• Yamanaka M

  Central Engineering Laboratories Nissan Motor Co. Ltd.

• YAMANAKA Mitsugu

  Central Engineering Laboratories ,Nissan Motor Co.,Ltd.

• SHINOHARA Mikiya

  Central Engineering Laboratories ,Nissan Motor Co.,Ltd.

• Kobayashi Michihiro

  Faculty of Engineering Science,Osaka University

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• Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
• High Pressure Effects on Photoluminescence Spectra of Color Centers in Diamond
• Influence of a Surface on the Franz-Keldysh Effect in n-and p-type GaAs Epitaxial Layers : Condensed Matter: Electronic Properties, etc.
• High-Pressure Study of Excitons and Self-Trapped Excitons in Anthracene Crystals at 1.5K
• High-Pressure Studies of Absorption and Luminescence Spectra in 3C-SiC
• Experiments on the Lateral Velocity of Two Particles Sedimenting Symmetrically about the Axis of a Cylinder

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