Electrical Conduction in Undoped CdS at Low Temperatures
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概要
- 論文の詳細を見る
The compensation dependences of the resistivity and Hall constant of CdS contain-ing 3X 10" cm ' donors have been studied at temperatures between 4 and 300 K.The compensation ratio was changed by thermal recovery of acceptor-type defectswhich were introduced into higln-purity samples by 10 MeV elecctron irradiation. Atvarious compensations, the temperature dependences of the resistivity and Hall con-slant show the features of impurity conduction. At low compeuusations the conduction similar to the D band conduction appears, although the ratio of the averagedistance of donors r to their effective Bohr radius a. is r./ a. $ 17. At high compensa-lions it is difficult to observe the low-temperature conduction. It is suggested that thelow-temperature conduction is the impurity conduction assisted by electron-phononinteraction via the piezoelectric field.
- 社団法人日本物理学会の論文
- 1985-11-15
著者
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KITAGAWA Michiharu
Radiation Center of Osaka Prefecture
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Kitagawa Michiharu
Radiation Center Of Osaka
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Morimoto Keizo
Radiation Center of Osaka Prefecture
関連論文
- Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs
- Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs
- ESR Study of Irradiated Pb(NO_3)_2
- Electrical Conduction in Undoped CdS at Low Temperatures