Jones Zone of Group V Semimetals As and Sb
スポンサーリンク
概要
- 論文の詳細を見る
Band structures on the Jones zone boundary are calculated for group V semi-metals arsenic and antimony by the pseudopotential method. Jones zone conceptis shown to be useful for clear understanding of bonding-antibonding energy gap.Peculiarity of crystal structure is discussed on the basis of the perturbation theoryof cohesive energy reinforced with the Jones zone concept. It is shown that theorigin of internal displacement of sublattices is, as has been naively expected,in the opening of the gap on the Jones zone surface, but the rh6mbohedral shearcomes from second order, metallic, binding energy.
- 社団法人日本物理学会の論文
- 1980-02-15
著者
-
Iwamatsu Masao
Department Of Computer Engineering Faculty Of Information Sciences Hiroshima City University
-
Iwamatsu Masao
Department Of Physics Tokyo Metropolitan University
-
Iwamatsu Masao
Department of Physics,Tokyo Metropolitan University
関連論文
- Atomic Force Microscopy Study of Self-Affine Fractal Roughness of Porous Silicon Surfaces
- Dielectric Confinement Effects on the Impurity and Exciton Binding Energies of Silicon Dots Covered with a Silicon Dioxide Layer
- A One Order Parameter Theory of Crystal-Melt Nucleation of Spherical Clusters
- Temperature-Dependent Surface Tension of Critical Nucleus in Crystal-Melt Nucleation
- Dynamical Structure Factor of a Classical Anharmonic Oscillator
- Image-Charge and Excitonic Effects on the Oscillator Strength of Silicon Quantum Dots
- Jones Zone of Group V Semimetals As and Sb